w39f010 Winbond Electronics Corp America, w39f010 Datasheet - Page 3

• Manufacturer Part Number: w39f010
• Description: 128k U 8 Cmos Flash Memory
• Manufacturer: Winbond Electronics Corp America

1. GENERAL DESCRIPTION
The
erase capability, the 1Mbits of data are divided into 32 small even pages with 4 Kbytes. The byte-wide
(u 8) data appears on DQ7  DQ0. The device can be programmed and erased in-system with a
standard 5V power supply. A 12-volt V
results in fast program/erase operations with extremely low current consumption (compared to other
comparable 5-volt flash memory products). The device can also be programmed and erased by using
standard EPROM programmers.
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Single 5-volt operations
Fast Program operation:
Fast Erase operation:
Read access time: 70/90 nS
32 even pages with 4K bytes
Any individual page can be erased
Hardware protection:
Flexible 4K-page size can be used as Parameter Blocks
Typical program/erase cycles:
Twenty-year data retention
Low power consumption
End of program detection
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 32-pin PLCC, 32- pin STSOP (8 x 14 mm) and 32- pin
TSOP
 Optional 16K byte Top/Bottom Boot Block with lockout protection



 Byte-by-Byte programming: 50 PS (max.)
 Chip Erase cycle time: 100 mS (max.)

 1K/10K


 Software method: Toggle bit/Data polling
W39F010
FEATURES
5-volt Read
5-volt Erase
5-volt Program
Page Erase cycle time: 25 mS (max.)
Active current: 15 mA (typ.)
Standby current: 15 PA (typ.)
is a 1Mbit, 5-volt only CMOS flash memory organized as 128K u 8 bits. For flexible
PP
is not required. The unique cell architecture of the W39F010
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Publication Release Date: December 26, 2005
W39F010
Revision A4