tpcm8001-h TOSHIBA Semiconductor CORPORATION, tpcm8001-h Datasheet
tpcm8001-h
Available stocks
Related parts for tpcm8001-h
tpcm8001-h Summary of contents
Page 1
... 2 1 104 1 150 °C ch −55 to 150 T °C stg 1 TPCM8001-H Unit: mm 0.25±0.05 0.8 0. + 0 0.2 - 0.2 0. 3.5±0.2 0. 2.75±0.2 0.8±0 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) ...
Page 2
... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 4.17 °C/W th (ch-c) (Tc=25°C) R 54.3 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCM8001-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2006-11-16 ...
Page 3
... GS Q gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCM8001-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.1 2.3 ⎯ ⎯ 7 9.5 ⎯ ...
Page 4
... Drain-source voltage V 0.5 0.4 0.3 0.2 0 Gate-source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCM8001-H I – 4.5 Common source 4 25°C 4 Pulse test 3.8 3.6 3.4 3 0.8 1.2 1.6 2.0 ( – Common source Ta = 25°C Pulse test ...
Page 5
... C oss 1.0 C rss 0.5 0 −80 −40 100 Ambient temperature 160 0 C) ° 5 TPCM8001-H − Common source Ta = 25°C Pulse test 4 −0.4 −0.6 −0.8 −1.0 (V) DS − Common source ...
Page 6
... Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage V (V) DS − 0 Pulse width t ( Case temperature T 100 6 TPCM8001-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 ( C) C ° 2006-11-16 ...
Page 7
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCM8001-H 20070701-EN 2006-11-16 ...