tpcm8006 TOSHIBA Semiconductor CORPORATION, tpcm8006 Datasheet
tpcm8006
Related parts for tpcm8006
tpcm8006 Summary of contents
Page 1
... 150 ° -55 to 150 °C stg 1 TPCM8006 Unit: mm 0.25±0.05 0.8 0. ＋ 0 0.2 － 0.2 0. 3.5±0.2 0. 2.75±0.2 0.8±0 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) ...
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... Year of manufacture (The last digit of the year) Symbol Max R 4.17 °C/W th (ch-c) (Tc = 25°C) R 54.3 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm TPCM8006 Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2008-05-23 ...
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... Duty ≤ 1 μ ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCM8006 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 10 ⎯ 1.3 2.5 ⎯ 9 13.5 ⎯ 5.5 ⎯ ⎯ ...
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... Drain-source voltage V 0.5 0.4 0.3 0.2 0 Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 0.1 100 0.1 4 TPCM8006 I – 4.3 5 4.5 Common source Ta = 25°C Pulse test 4 3.5 V 0.8 1.2 1 – Common source Ta = 25°C Pulse test ...
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... C oss 1.5 C rss 1 Common source 0 1mA Pulse test 0 −80 −40 100 (V) Ambient temperature TPCM8006 I – 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 ( – ...
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... V DSS max 0.1 0 Drain−source voltage V DS − 0 Pulse width t ( 160 0 C) 100 (V) 6 TPCM8006 (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature ° 2008-05-23 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCM8006 20070701-EN GENERAL 2008-05-23 ...