ech8673 ON Semiconductor, ech8673 Datasheet

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ech8673

Manufacturer Part Number
ech8673
Description
N-channel And P-channel Silicon Mosfets General-purpose Switching Device Applications
Manufacturer
ON Semiconductor
Datasheet
Ordering number : ENA1892
ECH8673
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-001
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
ON-resistance Nch: R DS (on)1=65m Ω (typ.), Pch: ON-resistance R DS (on)1=125m Ω (typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
1
8
0.65
Bottom View
Parameter
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
0 to 0.02
Symbol
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
When mounted on ceramic substrate (1200mm
ECH8673
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
1
8
TL
7
2
2
×0.8mm) 1unit
2
×0.8mm)
6
3
D0810PE TKIM TC-00002347
DATA SHEET
: ECH8
: -
4
5
N-channel
--55 to +150
±20
3.5
40
30
Marking
150
1.3
1.5
TU
P-channel
Lot No.
--2.5
--40
±20
--30
No. A1892-1/6
Unit
°C
°C
W
W
A
A
V
V

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ech8673 Summary of contents

Page 1

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View ECH8673 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm ...

Page 2

... Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage ECH8673 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =40V =0V I GSS V GS =±16V =0V ...

Page 3

... IT16156 [Nch] 250 Ta=25°C 200 150 100 --60 --40 --20 IT16158 --20V --1. =13Ω OUT G ECH8673 50Ω =10V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage (on 100 Ambient Temperature ° C No. A1892-3/6 [Nch] 4 ...

Page 4

... V DS =20V =3. Total Gate Charge --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage ECH8673 [Nch =10V 0.2 10 IT16160 [Nch] 1000 V DD =20V =10V ...

Page 5

... Drain Current -- --20V -- --2.5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge ECH8673 [Pch] 450 Ta=25°C 400 350 300 250 200 150 100 50 0 --12 --14 --16 --60 --40 --20 IT16168 [Pch] -- --10V --1.0 ...

Page 6

... Ambient Temperature °C Note on usage : Since the ECH8673 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

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