dmp2305u Diodes, Inc., dmp2305u Datasheet - Page 2

• Manufacturer Part Number: dmp2305u
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP2305U
Document number: DS31737 Rev. 3 - 2
20
16
12
8
4
0
5. Short duration pulse test used to minimize self-heating effect.
0
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
1
V
GS
V
= 2.5V
GS
V
= 3.0V
V
GS
2
GS
= 8V
= 4.5V
@T
T
3
J
A
= 25°C
= 25°C unless otherwise specified
V
V
GS
GS
= 1.5V
= 2.0V
4
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
|Y
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
oss
t
t
rss
DSS
iss
gd
fs
gs
r
f
G
g
|
5
www.diodes.com
Min
-0.5
2 of 6
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
14.0
13.0
53.8
23.2
Typ
727
7.6
1.4
1.2
⎯
⎯
⎯
45
60
87
69
64
23
9
-
20
16
12
8
4
0
0
±100
Max
-1.0
-0.9
113
V
⎯
60
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DS
0.5
V
Fig. 2 Typical Transfer Characteristic
= 5V
GS
T = 125°C
, GATE-SOURCE VOLTAGE (V)
A
Unit
T = 150°C
mΩ
1
μA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
Ω
V
V
S
T = -55°C
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
1.5
A
GS
DS
GS
DS
GS
GS
GS
DS
DS
GS
GS
DS
L
= 4Ω, R
= -20V, V
= V
= -5V, I
= -20V, V
= -4V, V
= 0V, I
= ±8V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, V
= -4.5V, V
T = 25°C
A
GS
T = 85°C
2
Test Condition
A
, I
G
D
D
DS
D
GS
= -250μA
= 6Ω, I
DS
D
D
D
= -4A
GS
GS
= -250μA
DS
= 0V, f = 1.0MHz
DMP2305U
= -4.2A
= -3.4A
= -2.0A
= -4.5V,
= 0V
2.5
= 0V
= 0V
= -4V, I
© Diodes Incorporated
D
= -1A
D
April 2009
3
= -3.5A