Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Features
•
•
•
•
•
•
•
•
•
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
ESD PROTECTED
@T
A
= 25°C unless otherwise specified
Steady
State
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
T
T
A
A
Symbol
R
= 25°C
= 85°C
BV
V
DS (ON)
I
C
I
|Y
V
C
C
GS(th)
DSS
GSS
TOP VIEW
oss
SD
rss
DSS
iss
fs
|
www.diodes.com
Min
-0.5
200
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SOT-523
1 of 4
Symbol
Symbol
T
V
V
J,
R
I
•
•
•
•
•
•
•
•
P
Mechanical Data
DSS
GSS
I
DM
T
θ JA
D
D
STG
Typ
0.7
1.1
1.7
Please click here to visit our online spice models database.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Gate
Equivalent Circuit
P-CHANNEL ENHANCEMENT MODE MOSFET
Gate
Protection
Diode
Max
±1.0
-1.0
-1.0
-1.4
175
1.1
1.6
2.6
30
20
⎯
⎯
Drain
Source
-55 to +150
Value
Value
-430
-310
-750
150
833
-20
±8
Unit
μA
ms
μA
pF
pF
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
G
TOP VIEW
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 0V, I
= 0V, I
= -20V, V
= V
= -4.5V, I
=10V, I
= -16V, V
= ±4.5V, V
= -2.5V, I
= -1.8V, I
D
GS
Test Condition
DMP22D6UT
S
, I
S
D
D
D
= -115mA
= -250mA
= 0.2A
D
GS
D
D
= -250μA
GS
DS
= -430mA
= -300mA
= -150mA
© Diodes Incorporated
Units
Units
°C/W
mW
= 0V
November 2008
= 0V
mA
mA
°C
V
V
= 0V