dmp21d0ufb4 Diodes, Inc., dmp21d0ufb4 Datasheet - Page 2

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dmp21d0ufb4

Manufacturer Part Number
dmp21d0ufb4
Description
20v P-channel Enhancement Mode Mosfet
Manufacturer
Diodes, Inc.
Datasheet

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Thermal Characteristics
Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
DMP21D0UFB4
D
atasheet number: DS35279 Rev. 1 - 2
0.001
0.01
10
0.000001 0.00001
0.1
9
8
7
6
5
4
3
2
1
0
0.0001
1
Characteristic
Characteristic
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.01
D = 0.005
D = Single Pulse
D = 0.02
D = 0.05
@T
A
Steady
State
= 25°C unless otherwise specified
0.001
@T
A
0.0001
T
T
T
= 25°C unless otherwise specified
A
A
A
= 25°C (Note 4)
= 85°C (Note 4)
= 25°C (Note 5)
0.01
Fig. 1 Single Pulse Maximum Power Dissipation
0.001
Fig. 2 Transient Thermal Response
t , PULSE DURATION TIME (SEC)
1
t , PULSE DURATION TIME (s)
1
www.diodes.com
0.1
0.01
2 of 6
Symbol
Symbol
T
J
V
V
R
R
,
I
D = 0.9
P
P
DSS
GSS
I
DM
T
0.1
θJA
θJA
D
D
D
STG
1
1
10
Diodes Incorporated
P(pk)
A Product Line of
-55 to +150
Duty Cycle, D = t /t
T - T = P * R
10
R
J
Value
Value
R
θJA
-0.86
-0.62
-1.31
Single Pulse
R
R
T - T = P * R
0.43
0.99
-5.0
293
126
θ
-20
±8
J
θ
θ
JA
t
JA
JA
(t) = r(t) *
A
1
t
(t) = r(t) * R
= 120°C/W
2
= 120°C/W
A
100
θ
100
R
JA
1 2
θ
θ
JA
(t)
JA
θ
JA
(t)
DMP21D0UFB4
1,000
1,000
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
°C
W
W
V
V
A
A
May 2011

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