dmp2130l Diodes, Inc., dmp2130l Datasheet - Page 2

• Manufacturer Part Number: dmp2130l
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 6)
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Note 6)
Diode Forward Voltage (Note 6)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMP2130L
Document number: DS31346 Rev. 4 - 2
6. Test pulse width t = 300μs.
7. Guaranteed by design. Not subject to production testing.
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
@T
A
= 25°C unless otherwise specified
T
J
= 25°C
Symbol
R
BV
V
I
D (ON)
DS (ON)
t
t
I
I
C
V
Q
D(off)
C
C
GS(th)
g
Q
D(on)
GSS
DSS
Q
I
t
FS
SD
t
oss
DSS
S
rss
gd
iss
gs
r
f
www.diodes.com
g
2 of 4
Min
-0.6
-20
-15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.79
Typ
443
128
101
7.3
7.3
2.0
1.9
⎯
⎯
⎯
⎯
⎯
51
87
99
⎯
12
20
38
41
-1.25
-1.26
±100
Max
Fig. 2 Typical Transfer Characteristics
110
125
1.7
-V
75
⎯
-1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
GS
DS
Pulsed
, GATE-SOURCE VOLTAGE (V)
= -5V
Unit
mΩ
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
V
A
I
V
V
V
V
V
V
V
V
I
V
V
V
V
R
V
f = 1.0MHz
D
S
DS
DS
DS
GS
GS
GS
GS
DS
GS
GS
GS
DS
DS
L
= -1.7A, V
= -250μA, V
= 10Ω, R
= -20V, V
= 0V, V
= V
= -10V, I
= -4.5V, V
= -4.5V, I
= -2.7V, I
= -2.5V, I
= -10V, V
= -16V, V
= -4.5V, V
= -4.5V, V
= -4.5V, V
GS
Test Condition
, I
GS
D
GS
G
D
D
D
D
GS
= -250μA
GS
GS
= 6Ω
GS
DS
= -3.0A
DS
DS
DS
= ±12V
= 0V
= -3.5A
= -3.0A
= -2.6A
= 0V
= -4.5V,
DMP2130L
= 0V
⎯
= 0V
= -5V
= -10V, I
= -10V, I
= -10V, I
© Diodes Incorporated
D
D
D
June 2008
= -3.0A
= -3.0A
= -3.0A