dmp2160uw Diodes, Inc., dmp2160uw Datasheet - Page 2

• Manufacturer Part Number: dmp2160uw
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMP2160UW
Document number: DS31521 Rev. 3 - 2
10
8
6
4
2
0
1.6
1.4
1.2
0.8
0.6
1.0
0
4.
-50 -25
Fig. 3 On-Resistance Variation with Temperature
Short duration pulse test used to minimize self-heating effect.
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
T , JUNCTION TEMPERATURE (°C)
1
J
V
GS
V
GS
= 2.0V
0
V
GS
V
= 2.5V
GS
= 3.0V
V
GS
= 3.0V
2
25
= 3.0V
V
50
T
GS
@T
J
V
3
= 25°C
= 1.5V
GS
I = -2A
D
A
75
= -2.5V
= 25°C unless otherwise specified
100
V
I = -4.5A
GS
4
D
= -4.5V
Symbol
R
BV
V
125 150
DS (ON)
I
C
I
V
C
GS(th)
C
g
DSS
GSS
oss
FS
SD
rss
DSS
iss
5
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Min
-0.4
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1,200
1,000
800
600
400
200
10
Typ
-0.6
120
627
⎯
⎯
⎯
⎯
75
90
⎯
64
53
2
8
6
4
0
4
0
0
0
V
DS
C
rss
= -5V
Fig. 2 Typical Transfer Characteristics
0.5
-V
±100
±800
V , DRAIN-SOURCE VOLTAGE (V)
Max
-1.0
-0.9
100
120
160
-1.0
C
⎯
⎯
⎯
⎯
⎯
T = 125°C
DS
GS
C
oss
A
4
iss
T = 150°C
A
, GATE SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
1
Unit
mΩ
μA
nA
pF
pF
pF
8
V
V
S
V
T = -55°C
A
1.5
T = 25°C
A
T = 85°C
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
A
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
12
= 0V, I
= -20V, V
= ±8V, V
= ±12V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= 0V, I
= -10V, V
2
Test Condition
GS
DMP2160UW
V
f = 1MHz
, I
GS
D
S
D
16
2.5
= -250μA
= -1.0A
D
DS
= 0V
D
D
D
GS
GS
= -250μA
DS
© Diodes Incorporated
= -1.5A
November 2008
= -1.5A
= -1.2A
= -1A
= 0V
= 0V
= 0V
= 0V
3
20