Maximum Ratings – TOTAL DEVICE
Maximum Ratings
Electrical Characteristics
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
Notes:
DMP2160UFDB
Document number: DS31643 Rev. 2 - 2
Low On-Resistance
•
•
•
Low Gate Threshold Voltage, -0.9V Max
Fast Switching Speed
Low Input/Output Leakage
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
1.
2.
3.
4.
5.
70mΩ @V
85mΩ @V
86mΩ (typ) @V
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
Short duration pulse test used to minimize self-heating effect.
GS
GS
= -4.5V
= -2.5V
Characteristic
Characteristic
Characteristic
GS
= -1.8V
@T
A
= 25°C unless otherwise specified
BOTTOM VIEW
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
DFN2020B-6
Symbol
R
BV
V
DS (ON)
I
I
|Y
C
1 of 4
V
C
C
GS(th)
GSS
DSS
SD
oss
DSS
iss
rss
fs
|
Mechanical Data
•
•
•
•
•
•
•
•
Symbol
T
Symbol
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
J
V
V
R
, T
I
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P
GSS
-0.45
DSS
I
DM
θ JA
Min
D
-20
D
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
STG
Case: DFN2020B-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.0065 grams (approximate)
Typ
632
0.7
54
68
86
65
54
⎯
⎯
⎯
⎯
⎯
8
Internal Schematic
D
S
3
4
TOP VIEW
±100
±800
Max
-0.9
-1.2
⎯
70
85
⎯
⎯
⎯
⎯
⎯
-1
G
2
5
G
-55 to +150
Unit
mΩ
μA
nA
pF
pF
pF
V
V
S
V
Value
Value
S
1
6
D
±12
-3.8
1.4
-20
-13
89
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
= -20V, V
= V
= -5V, I
= -10V, V
= 0V, I
= ±8V, V
= ±12V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, I
GS
, I
Test Condition
DMP2160UFDB
D
S
D
D
= -250μA
= -1.6A
DS
D
D
D
= -2.8A
GS
GS
= -250μA
DS
= -2.8A
= -2.0A
= -1.0A
= 0V
= 0V
= 0V
= 0V
© Diodes Incorporated
Units
°C/W
November 2008
Unit
°C
W
V
V
A
A
