dmp2160u Diodes, Inc., dmp2160u Datasheet - Page 2

• Manufacturer Part Number: dmp2160u
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP2160U
Document number: DS31586 Rev. 3 - 2
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
8
6
4
2
0
1.6
1.4
1.2
0.8
0.6
1.0
1
-50
0
-50 -25
Fig. 3 On-Resistance Variation with Temperature
-25
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
T , AMBIENT TEMPERATURE (°C)
DS
T , JUNCTION TEMPERATURE (°C)
1
A
J
V
GS
V
0
GS
= 2.0V
0
V
GS
V
= 2.5V
GS
= 3.0V
V
25
GS
= 3.0V
2
25
= 3.0V
50
V
50
I = 250µA
D
GS
V
3
= 1.5V
GS
I = -2A
75
D
75
= -2.5V
I = 1mA
D
100
100
V
I = -4.5A
GS
4
D
= -4.5V
125 150
125 150
5
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1,200
1,000
800
600
400
200
10
10
8
6
4
2
0
2
8
6
4
0
0
0
0
0
V
DS
C
0.2
Fig. 6 Diode Forward Voltage vs. Current
rss
= -5V
Fig. 2 Typical Transfer Characteristics
-V , SOURCE-DRAIN VOLTAGE (V)
0.5
-V
V , DRAIN-SOURCE VOLTAGE (V)
C
SD
T = 125°C
DS
GS
C
oss
A
4
0.4
iss
T = 150°C
A
, GATE SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
1
0.6
8
T = -55°C
T = 25°C
A
A
0.8
1.5
T = 25°C
A
T = 85°C
A
12
1
2
1.2
V
f = 1MHz
GS
DMP2160U
16
2.5
= 0V
1.4 1.6
© Diodes Incorporated
November 2008
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