dmp210dudj Diodes, Inc., dmp210dudj Datasheet - Page 2

• Manufacturer Part Number: dmp210dudj
• Description: Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
DMP210DUDJ
Document number: DS31494 Rev. 4 - 2
0.6
0.5
0.4
0.3
0.2
0.1
0.0
4. Short duration pulse test used to minimize self-heating effect.
5.
0
Guaranteed by design. Not subject to production testing.
0.5
Characteristic
V
Fig. 1 Typical Output Characteristics
D S
, DRAIN-SOURCE VOLTAGE(V)
1
1.5
2
@T
2.5
A
= 25°C unless otherwise specified
3
Symbol
R
BV
V
DS (ON)
t
t
I
C
I
|Y
V
C
GS(th)
C
d(on)
d(off)
DSS
GSS
oss
t
t
SD
rss
DSS
iss
fs
r
f
3.5
|
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4
Min
-0.5
-0.5
200
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 6
13.72
4.01
2.34
Typ
112
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
20
37
97
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2
±100
Max
-100
-1.0
-1.2
175
-50
5.0
7.0
10
15
30
20
⎯
⎯
⎯
⎯
⎯
⎯
Av e V
V
Fig. 2 Typical Transfer Characteristics
GS
Av e V
GS
, GATE-SOURCE VOLTAGE (V)
Av e V
Unit
mS
ms
nA
nA
nA
pF
pF
pF
V
V
Ω
V
(V) @ 85 C
GS
GS
(V) @ 25 C
(V) @ -55 C
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
2.5 3 3.5 4 4.5 5 5.5 6
D
°
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
GS
DS
GS
= -180mA, R
= -10V, I
= -16V, V
= -5.0V, V
= V
= -15V, V
= 0V, I
= ±5.0V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5V, I
= 0V, I
= -4.5V, V
°
°
GS
, I
Test Condition
D
S
D
D
= -250mA
= -115mA
DMP210DUDJ
D
D
D
D
GS
GS
= -250μA
Av e V
GS
DD
= -0.2A
DS
G
Av e V
= -100mA
= -50mA
= -20mA
= -10mA
= 0V
= 0V
= 2.0Ω
= 0V
= -15V
= 0V
GS
GS
V
© Diodes Incorporated
(V) @ 150 C
DS
(V) @ 125 C
=5.0V
June 2010
°
°