nvd5117pl ON Semiconductor, nvd5117pl Datasheet - Page 4

• Manufacturer Part Number: nvd5117pl
• Description: Power Mosfet −60 V, 16 M, −61 A, Single P−channe
• Manufacturer: ON Semiconductor

1000.0
100.0
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
1000
10.0
500
100
1.0
0.1
10
0
1
0.1
1
0
V
I
V
Figure 9. Resistive Switching Time Variation
R
Thermal Limit
Package Limit
C
D
Figure 11. Maximum Rated Forward Biased
V
Single Pulse
T
DD
GS
DS(on)
rss
C
= −29 A
GS
= 25°C
= −48 V
= −10 V
−V
−V
= −10 V
10
t
DS
DS
Figure 7. Capacitance Variation
t
f
Limit
r
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
20
1
10 ms
1 ms
30
10
100 ms
C
C
oss
iss
40
10
TYPICAL CHARACTERISTICS
10 ms
dc
V
T
GS
J
50
= 25°C
http://onsemi.com
t
t
d(on)
d(off)
= 0 V
100
100
60
4
120
100
250
200
150
100
10
80
60
40
20
50
8
6
4
2
0
0
0
25
0.4
0
Q
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source vs. Total Charge
Figure 12. Maximum Avalanche Energy vs.
gs
T
J
GS
J
10
= 25°C
0.5
, STARTING JUNCTION TEMPERATURE (°C)
−V
= 0 V
50
SD
Starting Junction Temperature
20
Q
, SOURCE−TO−DRAIN VOLTAGE (V)
0.6
g
Q
, TOTAL GATE CHARGE (nC)
gd
75
30
0.7
Q
40
T
100
0.8
50
0.9
125
60
1.0
V
I
T
DS
D
70
J
I
D
= −29 A
= 25°C
150
= −48 V
= −40 A
1.1
80
175
1.2
90