msm521209 ETC-unknow, msm521209 Datasheet

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msm521209

Manufacturer Part Number
msm521209
Description
131,072-word 9-bit Cmos Static
Manufacturer
ETC-unknow
Datasheet
E2I0027-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM521209
131,072-Word ¥ 9-Bit CMOS STATIC RAM
DESCRIPTION
The MSM521209 is a 131,072-word by 9-bit CMOS fast static RAM featuring a single 3.3 V power
supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely
static, external clock and refreshing operations are unnecessary, making this device very easy to use.
The MSM521209 can be used in the high-speed operation of an access time 20 ns due to adopting a
high-performance CMOS technology. In addition, the MSM521209 is provided with a chip enable
signal (CE) suited to the power-down function, and an output enable signal (OE) suited to the I/O
bus line control.
FEATURES
• 131,072-word ¥ 9-bit configuration
• Single 3.3 V power supply
• Fully static operation
• Operating temperature range: Ta = 0 C to 70 C
• Power dissipation
• Access time:
• (Input/Output) LVTTL compatible
• Power-down function by chip enable signal
• 3-state output
• Package:
PRODUCT FAMILY
MSM521209-20
MSM521209-25
MSM521209-30
Standby:
Operation:
36-pin 400 mil plastic SOJ
- 20
- 25
- 30
- 20
- 25
- 30
Family
200 mA (Max.)
180 mA (Max.)
160 mA (Max.)
2 mA (Max.)
20 ns (Max.)
25 ns (Max.)
30 ns (Max.)
(SOJ36-P-400-1.27)
Access Time (Max.)
20 ns
25 ns
30 ns
(Product : MSM521209-xxJS)
xx indicates speed rank.
Previous version: Aug. 1996
This version: Jan. 1998
Package
400 mil
36-pin SOJ
MSM521209
1/10

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msm521209 Summary of contents

Page 1

... LVTTL input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use. The MSM521209 can be used in the high-speed operation of an access time 20 ns due to adopting a high-performance CMOS technology. In addition, the MSM521209 is provided with a chip enable signal (CE) suited to the power-down function, and an output enable signal (OE) suited to the I/O bus line control ...

Page 2

... Plastic SOJ Function Address Input Data Input/Output Chip Enable Output Enable Write Enable , V Power Supply SS No Connection MSM521209 I/O9 I/O8 I/ I/O6 I/ A10 A11 A12 NC 2/10 ...

Page 3

... Care ("H" or "L") Memory Array 256 Rows 512 Columns ¥ 9 Blocks Column I/O Circuits Column Select Operating Contents * * Output Floating H H Output Floating H L Data Read L * Data Write MSM521209 3/10 ...

Page 4

... T — stg Condition V CC — 3.3 V ±0 — L Condition I/O I/O MSM521209 Rating Unit –0.5 to 4.6 V – °C –55 to 125 °C Min. Typ. Max. Unit 3.0 3.3 3 2.0 — 0 – ...

Page 5

... CCS V ≥ V – 0 Min. cycle CCS1 IH Min. cycle, I CCA OUT D OUT (t OLZ MSM521209 (V = 3.3 V ±0 0°C to 70°C) CC MSM521209 Unit Min. Typ. Max. mA –10 — –10 — 10 2.4 — — V — — 0.4 V — — — ...

Page 6

... OLZ t 5 — — 8 — CHZ t — 8 — OHZ MSM521209 (V = 3.3 V ±0 0°C to 70°C) CC MSM521209-30 Unit Max. Min. Max. — 30 — — — — — 3 — ns — 0 — ns — ...

Page 7

... A read cycle occurs during the overlap "L" "L" and WE = "H". Notes : 2. t and t CHZ output level CLZ OLZ are specified by the time when DATA is floating, not defined by the OHZ MSM521209 t CHZ t OHZ Dataout Valid t OH 7/10 ...

Page 8

... Data Hold Time WE to Output in High End of Write Address Valid to End of Write Output Active from End of Write WE Controlled Write ( ADDRESS OUT D IN MSM521209-20 MSM521209-25 MSM521209-30 Symbol Min. Max — — — — ...

Page 9

... specified by the time when DATA output is floating, not defined by the WHZ output level. 7. When I/O pins are in the output mode, don't apply the inverted input signal to the output pins Data In High Impedance MSM521209 9/10 ...

Page 10

... Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). MSM521209 (Unit : mm) Package material Epoxy resin ...

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