msm548262 Oki Semiconductor, msm548262 Datasheet - Page 30

• Manufacturer Part Number: msm548262
• Description: 262,144-word 8-bit Multiport Dram
• Manufacturer: Oki Semiconductor

¡ Semiconductor
RAM PORT OPERATION
RAM Read Cycle: RAS falling edge --- TRG = CAS = "H", DSF = "L"
Row address is entered at the falling edge of RAS and column address at the falling edge of CAS
to the device as in conventional DRAM. When the WE is "high" and TRG is "low" while CAS is
"low", the data outputs through DQ pins.
RAM Write Cycle: RAS falling edge --- TRG = CAS = "H", DSF = "L"
1) Write cycle with no mask: RAS falling edge -- WE = "H"
If WE is set "low" at the falling edge of CAS after RAS goes "low" a write cycle is excuted. If WE
is set "low" before the CAS falling edge, this cycle becomes an early write cycle, and all DQ pins
attain high impedance. All 8 data are latched on the falling edge of CAS.
If WE is set "low" after the CAS falling edge, this cycle becomes a late write cycle, and all 8 data
are latched on the falling edge of WE.
2) Write cycle with mask: RAS falling edge -- WE = "L"
If WE is set "low" at the falling edge of RAS, the mask write mode can be invoked.
Mask data is loaded and used. The mask data on DQ1 - DQ8 is latched into the write mask register
at the falling edge of RAS. When the mask data is low, writing is inhibited into the RAM and the
mask data is high, data is written into the RAM. This mask data is in effect during the RAS cycle.
In page mode cycle the mask data is retained during page access.
CAS falling edge --- DSF = "L"
CAS falling edge --- DSF = "L"
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