bso305n Infineon Technologies Corporation, bso305n Datasheet - Page 8

• Manufacturer Part Number: bso305n
• Description: Sipmos Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Data Sheet
Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
100
= 25 Ω
V
80
70
60
50
40
30
20
10
37
35
34
33
32
31
30
29
28
27
0
20
-60
BSO 305 N
= f ( T
40
-20
D
= 6 A, V
j
)
60
20
80
AS
DD
60
= f ( T
= 25 V
100
100
j
)
120
˚C
˚C
T
T
j
j
160
180
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
BSO 305 N
Gate
4
D puls
)
0,2
8
V
12
DS max
= 6 A
16
20
24
BSO 305N
0,8
28
V
DS max
nC
Q
05.99
Gate
36