bso302sn Infineon Technologies Corporation, bso302sn Datasheet - Page 8

• Manufacturer Part Number: bso302sn
• Description: Sipmos Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Data Sheet
Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
260
220
200
180
160
140
120
100
V
= 25 Ω
80
60
40
20
37
35
34
33
32
31
30
29
28
27
0
-60
20
BSO 302SN
= f ( T
40
-20
D
= 9.8 A, V
j
)
60
20
80
AS
60
DD
= f ( T
100
= 25 V
100
j
)
120
˚C
˚C
T
T
j
j
160
180
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
BSO 302SN
Gate
10
D puls
)
20
0,2
V
DS max
= 9.8 A
30
40
50
BSO 302SN
60
0,8
V
70
DS max
nC
Q
05.99
Gate
85