t1g6003028-sp TriQuint Semiconductor, t1g6003028-sp Datasheet - Page 3

• Manufacturer Part Number: t1g6003028-sp
• Description: 25w, 28v, 20mhz-6ghz, Gan Rf Power Transistor
• Manufacturer: TriQuint Semiconductor

T1G6003028-SP
25W, 28V, 20MHz-6GHz, GaN RF Power Transistor
Recommended operating conditions apply unless otherwise specified: T
DC Characteristics
RF Characteristics
Preliminary Data Sheet: Rev. G 6/24/2010
Copyright © 2010 TriQuint Semiconductor, Inc.
Electrical Specifications
Characteristics
Break-Down Voltage Drain Source
Gate Quiescent Voltage
Gate Threshold Voltage
Saturated Drain Current
Characteristics
Functional Tests, Instantaneous Bandwidth (Tested in TriQuint’s Eval Board, 5.3 GHz to 5.9 GHz, 100uS, 20%)
Gain @ P
(V
P
(V
Power Added Efficiency, 5.3 GHz to 5.9 GHz
(V
Functional Tests, Narrow Band EVB RF Performance (6 GHz), CW
Linear Gain
(V
Output Power at 3 dB Gain Compression
(V
Drain Efficiency at 3 dB Gain Compression
(V
Power-Added Efficiency at 3 dB Gain Compression
(V
Gain at 3 dB Compression
(V
Impedance Mismatch Ruggedness
(V
2dB
DS
DS
DS
DS
DS
DS
DS
DS
DS
, 5.3 GHz to 5.9 GHz
=28 V, P
=28 V, P
=28 V, P
=28 V, G
=28 V, G = G
=28 V, P
=28 V, P
=28 V, P
=28 V, P
2dB
, 5.3 GHz to 5.9 GHz
out
out
out
out
out
out
LIN
in
for P
=25 W, I
=25 W, I
=25 W, I
= P
= P
= P
= G
3dB
3dB
3dB
3dB
3dB
out
, I
, I
, I
, I
DQ
+ 3dB, I
= P
DQ
DQ
DQ
DQ
DQ
DQ
=100 mA), CW
=100 mA), CW
=100 mA), CW
=100 mA), CW
=150 mA)
=150 mA)
=150 mA)
3dB
, I
DQ
DQ
=100 mA, VSWR=TBD, all angles)
=100 mA), CW
Symbol
V
V
B
I
GS (th)
GS (Q)
VDSX
DSX
Min
85
– 3 –
Typ
120
-3.2
-3.5
7
Symbol
Max
PAE
DE
G
G
P
3dB
3dB
Connecting the digital World to the Global Network®
LIN
3dB
3dB
A
=25 ⁰C
Unit
Disclaimer: Subject to change without notice
A
V
V
V
Min
10.0
22.5
41.5
34.0
7.5
7.0
25
47
V
V
V
V
GS
DS
DS
DS
= -8 V, I
=28 V; I
=10 V; I
=5 V; V
in output power
No degradation
10.5
25.0
47.5
39.0
Typ
7.5
28
50
8
Conditions
GS
D
DQ
D
=4 mA
=20 mA
=0 V
=0.4 A
Max
Unit
dB
dB
dB
W
W
%
%
%