tqm7m5005 TriQuint Semiconductor, tqm7m5005 Datasheet
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tqm7m5005
Manufacturer Part Number
tqm7m5005
Description
Quad-band Gsm/gprs/edge-linear Power Amplifier Module
Manufacturer
TriQuint Semiconductor
Datasheet
1.TQM7M5005.pdf
(1 pages)
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Functional Block Diagram
Product Description
The TQM7M5005 is an extremely small (5x5x1.0mm
module for GSM/EDGE applications. This module has been optimized for high
EDGE efficiency and EDGE power class E2 operation while maintaining high
GSM/GPRS efficiency. In EDGE mode, the Vramp pin provides a continuously
variable bias control to minimize current consumption during backed-off power
conditions.
The module incorporates two highly integrated InGaP power amplifier die with a
CMOS controller. The CMOS controller implements a fully integrated closed-loop
power control within the module for GSM Operation. This eliminates the need for
any external couplers, power detectors, current sensing etc., to assure the output
power level. The latter is set directly from the V
module has Tx enable, band select, mode (EDGE or GSM) inputs. Module
construction is a low-profile over-molded land-grid array on laminate.
Electrical Specifications
Advance Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website:
Revision E, June 3, 2008
DCS / PCS In
GSM 850 / 900 In
Mode Select
VRAMP
Band Select
VBATT
TX_EN
EDGE Pout
Parameter
GSM Pout
Efficiency
Efficiency
(400KHz)
ACPR
Gain
Pin
850 Band
GSM/EDGE Multi-mode Power Amplifier Module
28.5
Typ
35
55
22
32
62
3
Logic
Power Control
900 Band
28.5
Typ
35
55
22
32
62
3
DCS Band
Typ
33
49
28
25
34
62
3
ramp
3
) multi-mode power amplifier
input from the DAC. The
PCS Band Units
GSM 850 / 900 Out
DCS / PCS Out
Typ
33
49
28
25
34
62
www.triquint.com
3
dBm
dBm
dBm
dBc
dB
%
%
Features
• Very compact size – 5×5×1.0 mm
• High GSM efficiency – GSM 850 55%,
• High EDGE efficiency – GSM 850 22%, GSM
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances
• GPRS class 12.
• CMOS band select and internal closed-loop
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/EDGE handsets
• GSM/EDGE wireless cards & data links
Package Style
GSM900 55%, DCS 49%, PCS 49%.
900 22%, DCS 25%, PCS 25%
power control for GSM Operation.
MODE
BS
V
V
TX_EN
RF
RF
BATT
RAMP
IN_GSM
IN_DCS
TQM7M5005
Package Size: LGA 5 x 5 x 1.0 mm
Advance Data Sheet
Top View
Ground
3
.
RF
RF
OUT_GSM
1
OUT_DCS