tga2921-sg TriQuint Semiconductor, tga2921-sg Datasheet

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tga2921-sg

Manufacturer Part Number
tga2921-sg
Description
4 Watt 802.11a Packaged Amplifier
Manufacturer
TriQuint Semiconductor
Datasheet

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Part Number:
TGA2921-SG
Quantity:
1 400
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
4 Watt 802.11a Packaged Amplifier
Product Description
The TGA2921-SG HPA provides 11
dB of gain, 4 W of output power
across 4.9 - 6 GHz and 2.5% EVM
at 26 dBm output power. The device
is ideally suited for high linearity,
high power wireless data
applications such as 802.11a WLAN
Bridge Amplifiers, U-NII and Point-
to-Point or Point-to-Multi-Point Non-
Line of Sight radios. The package
has a high thermal conductivity
copper base. Internal partial
matching simplifies system board
layout by requiring a minimum of
external components.
Lead-Free & RoHS compliant.
Evaluation Boards are available.
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =800 mA
Performance data taken @ in a 5.75GHz application circuit
-12
12
-3
-6
-9
40
35
30
25
20
15
10
Key Features
Primary Applications
9
6
3
0
5
0
5
14
Output
Pout
5.2
Advance Product Information
4.9 - 6 GHz Application Frequency Range
11 dB Nominal Gain @ 8V 800mA
36 dBm Nominal P1dB @ 8V 800mA
2.5% EVM at 26 dBm output power
IMD3 -50dBc @ 24dBm SCL, Typical
Bias Conditions: 7-9 V @ 700-800 mA (Quiescent)
0.5 µm HFET Technology
2 lead Cu base SMT package
802.11a WLAN Bridge Amplifiers
U-NII Band HPA
C-Band Pt-Pt and Pt-Multi Pt Radio
Gain
Gain
16
5.4
Input
IDS
18
5.6
Frequency (GHz)
20
5.8
Pin (dBm)
6
22
6.2
24
TGA2921-SG
February 15, 2008
6.4
26
6.6
28
6.8
7
30
20
15
10
5
0
-5
-10
-15
-20
1600
1400
1200
1000
800
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400
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0
1

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tga2921-sg Summary of contents

Page 1

... Watt 802.11a Packaged Amplifier Product Description The TGA2921-SG HPA provides gain output power across 4 GHz and 2.5% EVM at 26 dBm output power. The device is ideally suited for high linearity, high power wireless data applications such as 802.11a WLAN Bridge Amplifiers, U-NII and Point- to-Point or Point-to-Multi-Point Non- Line of Sight radios ...

Page 2

... For maximum life recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information TABLE I MAXIMUM RATINGS 1/ Parameter February 15, 2008 TGA2921-EPU-SG Value Notes ...

Page 3

... C, Nominal Idq = 800 mA) TEST PARAMETER CONDITION F = 5.75 GHz F = 5.75 GHz F = 5.75 GHz F = 5.75 GHz TABLE III THERMAL INFORMATION Test Conditions 800 mA (Quiescent) D Pdiss = 6.4 W February 15, 2008 TGA2921-EPU-SG TYPICAL UNITS dBm θ θ θ θ ...

Page 4

... Frequency (GHz) Pout IDS Gain Pin (dBm) 5.6GHz 5.7GHz 5.8GHz 5.9GHz Output Power per Tone (dBm) February 15, 2008 TGA2921-EPU- -10 -15 -20 6.4 6.6 6.8 7 1600 1400 1200 1000 800 600 400 200 ...

Page 5

... Frequency (GHz) Pout IDS Gain Pin (dBm) 5.6GHz 5.7GHz 5.8GHz 5.9GHz Output Power per Tone (dBm) February 15, 2008 TGA2921-EPU- -10 -15 -20 6.4 6.6 6.8 7 1600 1400 1200 1000 800 600 400 200 ...

Page 6

... Frequency (GHz) Pout IDS Gain Pin (dBm) 5.6GHz 5.7GHz 5.8GHz 5.9GHz Output Power per Tone (dBm) February 15, 2008 TGA2921-EPU- -10 -15 -20 6.4 6.6 6.8 7 1600 1400 1200 1000 800 600 400 200 ...

Page 7

... TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information Measured Fixtured Data Bias Conditions Idq = 800 mA OFDM 64 QAM 5.6 5.7 5.8 5 Output (dBm) February 15, 2008 TGA2921-EPU- ...

Page 8

... Gate February 15, 2008 TGA2921-EPU-SG S12 S22 Mag (dB) Deg -29.3 -37.522 -3.505 150.7 -29.209 -42.194 -3.475 147.28 -29.406 -47.499 -3.418 143.98 -29.243 -53.754 -3.339 140.6 -29.775 -57 ...

Page 9

... Packaged Dimensional Drawing TGA2921-EPU - SG Top View Side View Bias Procedure 1. Ensure no RF power is applied to the device. 2. Pinch off device by setting Vg to –3V. 3. Increase Vd to 8.0V while monitoring drain current. 4. Increase Vg until drain current reaches 800 mA. 5. Apply RF power. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test ...

Page 10

... GHz Application Circuit Schematic PCB is 20 mil thick Rogers 4003 substrate. The schematic is for small signal approach only TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 15, 2008 TGA2921-EPU-SG 10 ...

Page 11

... TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information Typical Evaluation Board Layout * External Component Listing Part Type Reference Capacitor C1 AVX06035J4R7BBT, Capacitor C2 AVX06035J1R2BBT, Capacitor C3 Capacitor C4 AVX06035J3R9BBT, Capacitor C5 Capacitor C6 AVX06035J1R2BBT, Resistor R1 February 15, 2008 TGA2921-EPU-SG = 3.38. r Description 4.7 pF 1.2 pF 1uF 3.9 pF 4.7 uF 1.2 pF 0805, 10 Ω 11 ...

Page 12

... Temperature Time above Melting Point Max Peak Temperature Time within 5 °C of Peak Temperature Ramp-down Rate TGA2921-SG TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information Typical Solder Reflow Profiles SnPb 3 °C/sec 60 – 120 sec @ 140 – 160 °C 60 – ...

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