tga2522-sm TriQuint Semiconductor, tga2522-sm Datasheet
tga2522-sm
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tga2522-sm Summary of contents
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... Vg = -0.5 V, typical. Primary Applications • • Gain IRL Product Description ORL The TriQuint TGA2522- three stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA2522-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio and other K band linear gain applications ...
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... Drain Current under RF Drive Vg1,2, Vg3 Gate Voltage 1/ See assembly diagram for bias instructions. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table I Parameter Table II Parameter 1/ Apr 2008 © Rev - TGA2522-SM Value Notes 1750 mA ...
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... TOI Output TOI TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table III RF Characterization Table TEST CONDITIONS MINIMUM f = 17.7-23.6 GHz f = 17.7-23.6 GHz f = 17.7-23.6 GHz f = 17.7-22 GHz 26 23.6 GHz 25 17.7-22 GHz f = 23.6 GHz f = 17.7-23.6 GHz Apr 2008 © Rev - TGA2522-SM NOMINAL MAXIMUM UNITS dBm ...
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... Tm = 1.0E+6 Hrs R θJC Tchannel = 133 º 4.5E+6 Hrs R θJC Tchannel = 129 º 6.2E+6Hrs -65 to 150 ºC . θJC Power De-rating Curve Tm=1.0E+06 Hrs 100 125 150 175 200 Baseplate Temp (C) Apr 2008 © Rev - TGA2522-SM Value Notes 13.5 (ºC/W) = 13.5 (ºC/W) 320 ºC 4 ...
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... Bias conditions 712 mA -0.5 V Typical TGA2522- Frequency (GHz) TGA2522- -10 -15 -20 IRL -25 ORL - Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2008 © Rev - TGA2522- ...
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... Measured Data Bias conditions 712 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2522-SM -40C +25C +95C Frequency (GHz) Apr 2008 © Rev - TGA2522- ...
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... Psat -10 -25 -20 -15 -10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Measured Data Pout Gain Ids - Pin(dBm) Pout Gain Ids - Pin (dBm) Apr 2008 © Rev - TGA2522-SM 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...
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... Bias conditions 712 mA -0.5 V (Vg held constant from small signal to Psat Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Psat P1dB Psat P1dB Apr 2008 © Rev - TGA2522- ...
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... Bias conditions 712 mA -0.5 V Typical TGA2522- Frequency (GHz) TGA2522-SM 0 -10 -20 -30 -40 -50 -60 -70 - Pout/tone (dBm) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com IM3 IM5 Apr 2008 © Rev - TGA2522- ...
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... Measured Data Measured Data Bias conditions 712 mA -0.5 V Typical Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2522-SM Gain Apr 2008 © Rev - TGA2522- ...
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... Package Pinout Pin 10, 11, 14, 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Description Out Vg1,2 Vg3 Vd1,2 Vd3 VDET VREF GND No Connect Apr 2008 © Rev - TGA2522-SM 11 ...
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... This will be ~ -0.5 V Apply RF signal TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Electrical Schematic Bias Procedures Bias-down Procedure Turn off RF supply Reduce VG3 to -1.5 V. Ensure Turn Turn Apr 2008 © Rev - TGA2522-SM 12 ...
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... Package edge to bond pad dimensions are shown to center of pad GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing Apr 2008 © Rev - TGA2522-SM 13 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com U1 Value -- TriQuint TGA2522-SM 1.0 μF 1206 SMT Ceramic Capacitor 0.01 μF 0603 SMT Ceramic Capacitor 1092-01A-5 Southwest Microwave End Launch Connector 240 KΩ ...
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... Board Material: 10 mil thick Rogers 4350, ε GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com VG1,2, VG3 VG1,2, VG3 Apr 2008 © Rev - TGA2522-SM C5 C11 J2 C10 C12 ...
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... Open Plated Vias in Center of Land pattern; Vias are 12 mil Diameter, 20 mil center-to-center spacing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Recommended Land Pattern Board Material: 10 mil thick Rogers 4350 Apr 2008 © Rev - TGA2522-SM 16 ...
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... Max Peak Temperature Time within 5 °C of Peak Temperature Ramp-down Rate Part TGA2522-SM, TAPE AND REEL GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com ...