tga2512-sm TriQuint Semiconductor, tga2512-sm Datasheet - Page 3
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tga2512-sm
Manufacturer Part Number
tga2512-sm
Description
4 - 14 Ghz Balanced Lna
Manufacturer
TriQuint Semiconductor
Datasheet
1.TGA2512-SM.pdf
(18 pages)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Noise Figure, NF
Output Power @ 1dB Gain Compression, P1dB
OIP3
Temperature Gain Coefficent
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
(channel to Case)
(channel to Case)
JC
JC
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Thermal Resistance
Thermal Resistance
PARAMETER
measurements.
Temperature @ 70
PARAMETER
ELECTRICAL CHARACTERISTICS
O
THERMAL INFORMATION
Vd = 5 V
Id = 160 mA Gate Bias
Pdiss = 0.80 W
Vd = 5 V
Id = 90 mA Self Bias
Pdiss = 0.45 W
C
TEST CONDITIONS
(Ta = 25
TABLE III
TABLE II
0
C, Nominal)
Advance Product Information
Gate Bias
4 - 14
-0.02
-0.1
160
5.0
2.3
25
10
20
13
24
82.7
(
100
T
O
CH
C)
Self Bias
4 - 14
( C/W)
-0.02
37.6
28.2
5.0
2.3
90
22
10
20
16
6
-
JC
January 26, 2006
TGA2512-SM
5.8E+6
4.1E+7
UNITS
(HRS)
dB/
dBm
dBm
GHz
mA
T
dB
dB
dB
dB
V
V
M
0
C
3