dmg6602svt Diodes, Inc., dmg6602svt Datasheet - Page 2

• Manufacturer Part Number: dmg6602svt
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Maximum Ratings – Q1
Maximum Ratings – Q2
Thermal Characteristics
Electrical Characteristics – Q1
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 4) V
Pulsed Drain Current (Note 5)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 4) V
Pulsed Drain Current (Note 5)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG6602SVT
Document number: DS35159 Rev. 1 - 2
4. Device mounted on FR-4 with minimum recommended pad layout, single sided.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
GS
GS
Characteristic
= 4.5V)
= 10V)
GS
GS
GS
GS
@TA = 25°C unless otherwise specified
@TA = 25°C unless otherwise specified
Characteristic
Characteristic
Characteristic
= 10V
= 4.5V
= -10V
= -4.5V
A
= 25°C (Note 4)
@ T
A
= 25°C unless otherwise stated
Steady
Steady
Steady
Steady
State
State
State
State
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
t
SD
oss
t
DSS
iss
rss
gd
fs
gs
r
f
g
g
g
|
www.diodes.com
Min
1.0
2 of 9
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
Typ
290
0.8
1.4
1.2
1.5
38
55
40
40
13
4
4
9
3
5
3
-
-
-
-
±100
Max
100
400
1.0
3.0
60
80
80
13
1
6
-
-
-
-
-
-
-
-
-
Symbol
Symbol
Symbol
T
V
V
J
V
V
R
I
,
P
DSS
GSS
I
I
DM
DSS
GSS
I
I
I
T
θJA
D
D
D
D
D
D
STG
Unit
mΩ
µA
nA
pF
nC
ns
Ω
V
V
S
V
V
V
V
V
V
V
V
V
V
f = 1.2MHz
V
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
GS
G
= 3Ω, R
-55 to +150
= 24V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 15V, V
= 15V, V
= 0V, I
= ±20V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
Value
Value
Value
-11.2
13.0
-2.8
-2.4
-2.3
-2.1
1.12
±20
±20
-30
111
3.4
2.7
2.7
2.2
30
GS
Test Condition
DMG6602SVT
, I
D
D
S
L
GS
D
D
= 250μA
D
= 3.1A
= 1A
= 4.7Ω
GS
GS
GS
GS
DS
= 250μA
= 3.1A
DS
= 2A
= 0V, f = 1MHz
= 0V
= 0V,
= 4.5V, I
= 10V, I
= 15V,
= 0V
© Diodes Incorporated
August 2011
D
°C/W
D
Unit
Unit
Unit
= 3A
°C
W
V
V
A
A
A
V
V
A
A
A
= 3.1A