ntms10p02 ON Semiconductor, ntms10p02 Datasheet - Page 3

• Manufacturer Part Number: ntms10p02
• Description: Power Mosfet 20 V, 10 A, P-channel Enhancement - Mode Single So-8 Package
• Manufacturer: ON Semiconductor

0.100
0.075
0.050
0.025
5.0
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
0
−50
0
0
0
−V
−25
0.25
−V
Figure 5. On−Resistance Variation with
DS
Figure 1. On−Region Characteristics
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
I
V
2.0
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
D
0.50
Figure 3. On−Resistance versus
, JUNCTION TEMPERATURE (°C)
GS
0
= −10 A
−2.3 V
= −4.5 V
Gate−To−Source Voltage
−3.1 V
−10 V
0.75
25
Temperature
4.0
−2.1 V
1.00
50
V
1.25
6.0
75
GS
= −1.7 V
I
T
−1.9 V
D
1.50
J
100
= −10 A
= 25°C
T
8.0
J
= 25°C
1.75
125
http://onsemi.com
2.00
150
10
3
10,000
0.020
0.016
0.012
0.008
1000
100
8.0
6.0
4.0
2.0
10
10
0
0
6.0
2.0
Figure 4. On-Resistance versus Drain Current
V
T
Figure 6. Drain−To−Source Leakage Current
DS
J
−V
−V
V
= 25°C
GS
DS
≥ −10 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
0.5
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6.0
−I
D
10
, DRAIN CURRENT (AMPS)
and Gate Voltage
versus Voltage
1.0
10
100°C
25°C
T
T
V
J
V
J
14
GS
GS
= 125°C
= 100°C
1.5
= −2.5 V
= −4.5 V
14
T
J
= −55°C
2.0
18
18
2.5