blf245c Advanced Semiconductor, Inc., blf245c Datasheet
blf245c
Manufacturer Part Number
blf245c
Description
Rf Power Mosfet
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
1.BLF245C.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF245C
Manufacturer:
ASI
Quantity:
20 000
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
CHARACTERISTICS
DESCRIPTION:
The
amplifier applications in the VHF
frequency range.
FEATURES INCLUDE:
• P
• 30:1 Load VSWR Capability
• Omnigold™ metalization system
MAXIMUM RATINGS
transistor designed for large signal
P
T
SYMBOL
V
V
θ
T
DISS
G
I
STG
DS
GS
JC
D
BV
V
J
ASI BLF245C
C
= 16 dB Typical at 175 MHz
I
I
C
C
GS(th)
g
P
DSS
GSS
η
ψ
oss
iss
rss
DSS
fs
G
D
68 W @ T
-65 °C to +150 °C
-65 °C to +200 °C
I
V
V
V
V
V
V
V
D
DS
DS
DS
DS
DS
DS
SWR
= 10 mA
1.8 °C/W
= 28 V
= 28 V
= 0 V
= 10 V
= 10 V
= 28 V
= 30:1
±20 V
6.0 A
65 V
is a VDMOS
C
T
N-Channel Enhancement Mode
= 25 °C
C
AT ALL PHASE ANGLES
= 25 °C
TEST CONDITIONS
I
V
V
V
DQ
I
I
D
D
GS
GS
GS
= 25 mA
= 1.5 A
= 10 mA
RF POWER MOSFET
= 0 V
= ±20 V
= 0 V
Specifications are subject to change without notice.
f = 150 MHz
P
f = 1.0 MHz
out
= 30 W
PACKAGE STYLE .400 8L FLG
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MINIMUM
G
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.395 / 10.03
.1925
.065 / 1.65
.380 / 9.65
.120 / 3.05
.115 / 2.92
.003 / 0.08
.159 / 4.04
F
K
COMMON SOURCE
M IN IM U M
inches / m m
2.0
1.2
.125
65
13
50
E
NO DEGRADATION IN OUTPUT POWER
D
.030 / 0.76
.360 / 9.14
.130 / 3.30
H
B
J
C
I
TYPICAL MAXIMUM
A
125
1.9
7.0
75
16
60
NONE
F U LL R
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.405 / 10.29
M A X IM U M
.125 / 3.18
.075 / 1.91
.390 / 9.91
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
inches / m m
L M
4 x .060 R
N
O
2.0
1.0
4.5
BLF245C
UNITS
REV. A
mA
µA
dB
pF
1/1
%
V
V
S
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