bso220n Infineon Technologies Corporation, bso220n Datasheet - Page 8

• Manufacturer Part Number: bso220n
• Description: Sipmos-r Small Signal Transistor
• Manufacturer: Infineon Technologies Corporation

Data Sheet
Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
24.5
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
18.5
18.0
V
= 25 Ω
20
16
14
12
10
8
6
4
2
0
-60
20
BSO220N
= f ( T
40
-20
D
= 3.2 A, V
j
)
60
20
80
AS
60
DD
= f ( T
100
= 25 V
100
j
)
120
˚C
˚C
T
T
j
j
160
180
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
BSO220N
2
Gate
D puls
4
0,2
)
6
V
DS max
= 2.6 A
8
10 12 14 16 18
BSO 220N
0,8
V
DS max
nC
Q
05.99
Gate
21