bso083n03msg Infineon Technologies Corporation, bso083n03msg Datasheet - Page 7

• Manufacturer Part Number: bso083n03msg
• Description: Optimos 3 M-series Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
0.1
10
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25
D
=1 mA
10
20
t
T
125 °C
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
12
10
Q
V
8
6
4
2
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
4
=14 A pulsed
g s
8
Q
Q
gate
g
Q
12
[nC]
sw
Q
BSO083N03MS G
g d
16
6 V
24 V
20
15 V
Q
g ate
2008-07-08
24