tpcc8a01-h TOSHIBA Semiconductor CORPORATION, tpcc8a01-h Datasheet - Page 6

• Manufacturer Part Number: tpcc8a01-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
2.5
1.0
2.0
1.5
0.5
0.1
10
0
1
0.1
0
I D max (Pulse) *
(2)
(1)
Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
Drain-source voltage V
Ambient temperature Ta (°C)
40
Safe operating area
t =10 ms *
1000
0.01
1
100
0.1
0.0001
10
1
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
P
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
D
80
– Ta
0.001
V DSS max
t =1 ms *
10
DS
120
(V)
0.01
160
100
Pulse width t
6
0.1
r
th
– t
w
w
1
40
30
20
10
(s)
0
0
10
Case temperature Tc (°C)
40
Single - pulse
P
100
D
80
– Tc
(2)
(1)
(3)
TPCC8A01-H
1000
120
2010-01-19
160