tpcc8001-h TOSHIBA Semiconductor CORPORATION, tpcc8001-h Datasheet
tpcc8001-h
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tpcc8001-h Summary of contents
Page 1
... 1 0 126 2 150 °C ch −55 to 150 T °C stg 1 TPCC8001-H Unit: mm 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN ⎯ JEDEC ⎯ JEITA TOSHIBA 2-3X1A Weight: 0.02 g (typ.) Circuit Configuration 2009-07-15 ...
Page 2
... Year of manufacture (The last digit of the year) Symbol Max R 4.2 °C/W th (ch-c) (Tc = 25℃ °C/W th (ch-a) (Note 2a) R 180 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCC8001-H Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2009-07-15 ...
Page 3
... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCC8001-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ 30 ⎯ 15 ⎯ 1.5 2.5 ⎯ 7.6 10.6 ⎯ 5.5 8 ⎯ ...
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... Drain-source voltage V 0.4 0.3 0.2 0 (V) Gate-source voltage V 100 10 Common source Ta = 25°C Pulse test 1 100 0.1 4 TPCC8001-H I – 3.6 4 Common source Ta = 25°C Pulse test 3.4 3 2.7 V 0.4 0.8 1.6 2 1.2 ( – Common source Ta = 25°C Pulse test ...
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... Drain-source voltage V ° 2.5 2.0 C iss 1.5 C oss 1.0 C rss Common source 0 Pulse test 0 −80 −40 100 (V) Ambient temperature TPCC8001-H I – 4 −0.4 −0.6 −0.8 −1.0 ( – 120 160 C) ° 2009-07-15 ...
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... Curves must be derated linearly with increase in temperature. V DSS max 0.1 1 0.1 10 Drain-source voltage – 0.01 0 Pulse width t ( 160 C) ° 100 (V) 6 TPCC8001-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature ° C 2009-07-15 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCC8001-H 2009-07-15 ...