tpcc8003-h TOSHIBA Semiconductor CORPORATION, tpcc8003-h Datasheet
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tpcc8003-h
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tpcc8003-h Summary of contents
Page 1
... GSS 150 °C ch −55 to 150 T °C stg 1 TPCC8003-H Unit: mm 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN ⎯ JEDEC ⎯ JEITA TOSHIBA 2-3X1A Weight: 0.02 g (typ.) Circuit Configuration 2009-07-15 ...
Page 2
... Year of manufacture (The last digit of the year) Symbol Max R 5.8 °C/W th (ch-c) (Tc = 25℃ °C/W th (ch-a) (Note 2a) R 180 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCC8003-H Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2009-07-15 ...
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... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCC8003-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ 30 ⎯ 15 ⎯ 1.3 2.3 ⎯ 14.3 19.3 ⎯ 12.2 16 ⎯ ...
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... Drain-source voltage V 0.6 0.4 0 (V) Gate-source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCC8003-H I – 3.7 4 Common source Ta = 25°C 3.6 Pulse test 3.5 3.4 3.3 3.2 3 2.9 V 0.4 0.8 1.6 2 1.2 ( – Common source Ta = 25°C Pulse test ...
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... Drain-source voltage V ° 2.5 2.0 C iss 1.5 1.0 C oss Common source C rss 0 0.2 mA Pulse test 0 −80 −40 100 (V) Ambient temperature TPCC8003-H I – 4 −0.4 −0.6 −0.8 −1.0 ( – 120 160 C) ° 2009-07-15 ...
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... Ta = 25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 1 0.1 10 Drain-source voltage V ( – Single - pulse 0.01 0 Pulse width t ( 160 C) Case temperature T 100 6 TPCC8003-H (2) (1) (3) 100 1000 P – 120 160 ( C) ° C 2009-07-15 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCC8003-H 2009-07-15 ...