tpc6d03 TOSHIBA Semiconductor CORPORATION, tpc6d03 Datasheet
tpc6d03
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tpc6d03 Summary of contents
Page 1
... T 125 °C j (Ta = 25°C) Symbol Rating Unit P T 600 mW (Note 2) −55~150 T °C stg (for transistor and diode) Symbol Max Unit R th (j-a) 312 °C/W (Note 1) 1 TPC6D03 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1F Weight: 0.011 g (typ 2006-11-10 ...
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... Test Condition = RRM RRM MHz TPC6D03 Min Typ ⎯ ⎯ ⎯ ⎯ −20 ⎯ ⎯ 140 ⎯ 85 ⎯ ⎯ −0.17 ⎯ ⎯ −1.10 ⎯ Ω ⎯ 135 ⎯ ...
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... FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm These characteristic curves must be derated linearly with increase in temperature. −0.01 −1.2 −1.5 −0.1 ( TPC6D03 h – 100°C 25 −55 −0.01 −0.1 −1 Collector current I ( – ...
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... Average forward current I 0.5 0.4 0.3 0.2 0.1 0 1.2 1.4 1.6 0 (V) F 100 Rectangular waveform 360° (AV 1.0 1.2 1 (AV) 4 TPC6D03 P – (AV) F (AV) DC 180 120 90 60 α = 30° Rectangular waveform 0° α 360° Conduction angle α 0.2 0.4 0.6 0.8 1.0 Average forward current I (A) F (AV) C – V (typical) j ...
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... 125°C 0.6 0.4 0 Reverse voltage V R 100 25° 0.1 0.01 100 0 (typical) DC 300 240 180 120 α = 60° (V) 5 TPC6D03 I – T (typical Pulse measurement (one cell 100 Junction temperature T (°C) j 2006-11-10 150 ...
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... Permissible power dissipation for – (j-a) w Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm Either single-operation 0 Pulse width t (s) w 0.4 0.5 ( TPC6D03 2 ) 100 1000 2006-11-10 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC6D03 20070701-EN 2006-11-10 ...