tpc6109-h TOSHIBA Semiconductor CORPORATION, tpc6109-h Datasheet - Page 3

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tpc6109-h

Manufacturer Part Number
tpc6109-h
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Marking
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ● to the lower left of the Part No. marking indicates Pin 1.
(or abbreviation code)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
(Note 5)
DD
Part No.
= −24 V,T
Pin #1
Lot code (month)
(a)
ch
S3J
Lot code
= 25°C (initial), L = 500 μH, R
(year)
25.4 × 25.4 × 0.8
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No. (weekly code)
FR-4
(Unit: mm)
Product-specific code
G
3
= 25 Ω, I
AR
= -5 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPC6109-H
2008-01-15

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