ssd20p04-60d SeCoS Halbleitertechnologie GmbH, ssd20p04-60d Datasheet

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ssd20p04-60d

Manufacturer Part Number
ssd20p04-60d
Description
P-ch Enhancement Mode Power Mosfet 22a, -40v, Rds On 69m
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.SSD20P04-60D.pdf (4 pages)
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
DESCRIPTION
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
a.
b.
Notes：
V
Low R
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology..
DS
-40
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
(V)
DS(on)
Elektronische Bauelemente
PRODUCT SUMMARY
provides higher efficiency and extends battery life.
106@V
69@V
R
PARAMETER
DS
(on) m(
GS
b
GS
= -10V
= -4.5V
a
DS(on)
a
and to ensure minimal power loss and heat
(T
THERMAL RESISTANCE RATINGS
A suffix of “-C” specifies halogen free
I
D
A
22
18
(A)
= 25°C unless otherwise specified)
RoHS Compliant Product
a
a
SYMBOL
T

Gate
J
R
R
V
V
, T
I
P
I
DM
I
θJC
θJA
GS
DS
D
S
D
STG
P-Ch Enhancement Mode Power MOSFET
Source
Drain


22A, -40V, R
SSD20P04-60D
RATINGS
-55 ~ 175
±20
±72
-40
-30
3.0
50
22
50
Any changes of specification will not be informed individually.
DS(ON)
REF.
G
A
B
C
D
E
F
H
M
TO-252(D-Pack)
Min.
5.20
2.20
0.45
2.40
5.40
6.4
6.8
0.8
Millimeter
69mΩ
A
B
K
J
Max.
5.50
2.40
0.58
1.20
6.8
7.3
3.0
6.2
°C / W
°C / W
UNIT
G E
H
F
REF.
°C
W
M
O
V
V
A
A
A
K
N
P
J
Page 1 of 4
Min.
0.70
0.50
0.43
0.9
Millimeter
2.30 REF.
0
N
O
C
D
P
Max.
0.90
0.15
0.58
1.1
1.6

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ssd20p04-60d Summary of contents

Page 1

... A SYMBOL STG THERMAL RESISTANCE RATINGS a R θJA R θJC SSD20P04-60D 22A, -40V, R 69mΩ DS(ON) TO-252(D-Pack  Drain Millimeter REF. REF. Min. Max. A 6.4 6 5.20 5 ...

Page 2

... Dynamic 2 2.5 gd Switching d(on 2 53.6 d(off SSD20P04-60D 22A, -40V, R 69mΩ DS(ON) TEST CONDITIONS - -250 μA DS GS, D ±100 0V ±25V -24V μ -24V, V =0V -5V -10V DS GS ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Aug-2010 Rev. A SSD20P04-60D P-Ch Enhancement Mode Power MOSFET 22A, -40V, R 69mΩ DS(ON) Any changes of specification will not be informed individually. Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Aug-2010 Rev. A SSD20P04-60D P-Ch Enhancement Mode Power MOSFET 22A, -40V, R 69mΩ DS(ON) Any changes of specification will not be informed individually. Page ...

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