nvtfs4823n ON Semiconductor, nvtfs4823n Datasheet - Page 2

• Manufacturer Part Number: nvtfs4823n
• Description: Nvtfs4823n Power Mosfet
• Manufacturer: ON Semiconductor

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
Symbol
V
Q
Q
R
Q
J
(BR)DSS
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
C
V
g
d(on)
d(off)
= 25°C unless otherwise noted)
DSS
GSS
G(TH)
t
RR
t
t
FS
oss
t
t
rss
GS
GD
SD
RR
iss
a
b
r
f
V
V
V
GS
http://onsemi.com
GS
GS
V
V
V
= 0 V, f = 1.0 MHz, V
V
= 4.5 V, V
V
I
= 10 V, V
DS
V
GS
S
GS
V
GS
V
V
DS
V
I
GS
D
GS
= 15 A
GS
DS
GS
= 30 V
dI
= 0 V,
= 0 V,
= 15 A, R
Test Condition
= 4.5 V, V
= 0 V, V
= V
S
= 0 V, I
= 4.5 V, I
= 1.5 V, I
= 10 V, I
2
/dt = 100 A/ms,
V
I
GS
S
DS
DS
DS
= 15 A
, I
= 0 V,
GS
= 15 V, I
D
= 15 V, I
D
G
DS
D
= 250 mA
D
D
= 250 mA
= 3.0 W
= "20 V
= 15 A
= 20 A
= 15 A
= 15 V,
T
T
T
T
J
J
J
J
DS
= 125°C
D
= 125°C
D
= 25°C
= 25°C
= 15 A
= 15 A
= 12 V
Min
1.5
30
13.5
0.85
0.72
Typ
750
175
100
8.1
6.0
0.8
2.4
2.4
6.0
6.0
5.0
34
12
12
22
14
12
4
"100
Max
10.5
17.5
1.0
2.5
1.1
10
Unit
mW
nA
nC
nC
nC
mA
pF
ns
ns
V
V
S
V