nvtfs5826nl ON Semiconductor, nvtfs5826nl Datasheet - Page 3

• Manufacturer Part Number: nvtfs5826nl
• Description: Nvtfs5826nl Power Mosfet
• Manufacturer: ON Semiconductor

0.050
0.040
0.030
0.020
0.010
2.40
2.20
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
60
50
40
30
20
10
0
−50
2
0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
GS
−25
= 10 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
= 10 V
V
V
DS
GS
10 V
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
4
25
Temperature
2
Voltage
50
6
V
GS
75
3
= 4.5 V
100
TYPICAL CHARACTERISTICS
8
125
T
I
T
D
J
4
J
4.0 V
3.8 V
= 25°C
= 10 A
3.6 V
= 25°C
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3.4 V
3.2 V
2.8 V
3.0 V
150
10
175
5
3
100000
10000
0.040
0.030
0.020
0.010
1000
100
50
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
V
T
GS
DS
J
= 25°C
= 0 V
≥ 10 V
10
V
V
Figure 2. Transfer Characteristics
DS
GS
20
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
2
T
15
I
T
D
J
J
, DRAIN CURRENT (A)
= 125°C
T
= 25°C
J
Gate Voltage
= 150°C
T
vs. Voltage
30
J
V
20
V
= 125°C
GS
GS
3
= 4.5 V
= 10 V
25
40
T
J
= −55°C
30
4
50
35
60
5
40