tpca8a01-h TOSHIBA Semiconductor CORPORATION, tpca8a01-h Datasheet - Page 6

• Manufacturer Part Number: tpca8a01-h
• Description: ?oshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type Ultra-high-speed U-mos ?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
2.5
1.5
0.5
0.1
10
1
3
2
0
1
0.1
0
I D max (Continuous) *
I D max (Pulse) *
(2)
*
Curves must be derated
linearly with increase in
temperature.
(1)
Single - pulse
Ta = 25°C
Drain-source voltage V
Ambient temperature Ta (°C)
40
DC Operation
Tc = 25°C
Safe operating area
1000
100
1
0.1
10
0.001
1
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Tc = 25℃
P
t =10 ms *
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
D
80
– Ta
V DSS max
t =1 ms *
10
0.01
DS
120
(V)
160
100
0.1
Pulse width t
r
6
th
1
– t
w
w
20
50
40
30
10
(s)
0
0
10
Case temperature Tc (°C)
40
100
Single - pulse
P
D
80
– Tc
(3)
(2)
(1)
1000
120
TPCA8A01-H
2007-04-10
160