tpca8128 TOSHIBA Semiconductor CORPORATION, tpca8128 Datasheet - Page 3

• Manufacturer Part Number: tpca8128
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Note 5: V
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
rating of drain-source voltage.
DSX
mode (the application of a plus voltage between gate and source) may cause decrease in maximum
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
r
f
g
V
V
V
I
I
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
D
D
DR
GS
GS
DS
DS
GS
GS
DS
DD
= −10 mA, V
= −10 mA, V
= −34 A
3
−10 V
= −34 A, V
(Ta = 25°C)
= −30 V, V
= −10 V, I
= −10 V, V
= ±20 V, V
= −4.5 V, I
= −10 V, I
≈ −24 V, V
0 V
Test Condition
Test Condition
w
= 10 μs
D
D
GS
GS
GS
D
GS
GS
GS
DS
= −0.5mA
= −17 A
⎯
= −17 A
= 0 V
= 0 V
= 10 V (Note 5)
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V
I
D
V
DD
= −17A
≈ −15 V
Output
−0.8
−30
−21
Min
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4800
Typ.
Typ.
800
900
135
390
115
5.1
3.7
⎯
⎯
⎯
⎯
⎯
11
21
11
30
⎯
⎯
TPCA8128
2010-01-07
±100
−102
Max
−2.0
Max
−10
6.7
4.8
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
nC
nA
pF
ns
V
V
A
V