tpca8036-h TOSHIBA Semiconductor CORPORATION, tpca8036-h Datasheet - Page 6

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tpca8036-h

Manufacturer Part Number
tpca8036-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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1000
100
0.1
10
1.0
3.0
2.5
2.0
1.5
0.5
1
0.1
0
0
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
* Single-pulse
Ta = 25℃
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
40
1000
0.01
100
Safe operating area
0.1
0.0001
10
t =10 ms*
1
1
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t = 10 s
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
board (b) (Note 2b)
board (a) (Note 2a)
P
D
80
– Ta
0.001
t =1 ms*
V DSS max
10
DS
120
(V)
°
0.01
C)
100
160
Pulse width t
0.1
r
th
6
– t
w
w
1
(s)
50
40
30
20
10
0
0
10
Single - pulse
Case temperature T
40
100
P
D
(2)
(1)
(3)
80
– Tc
1000
C
TPCA8036-H
120
(
°
C)
2008-08-18
160

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