tpca8030-h TOSHIBA Semiconductor CORPORATION, tpca8030-h Datasheet - Page 4

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tpca8030-h

Manufacturer Part Number
tpca8030-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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100
0.1
20
16
12
40
32
24
16
10
8
4
0
8
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
10
8
6 5
Drain-source voltage V
Gate-source voltage V
0.2
1
Ta = −55°C
Drain current I
4.5
4
1
3.8
3.6
100
0.4
2
⎪Y
I
I
D
D
fs
– V
– V
⎪ – I
100
GS
DS
25
0.6
D
3
D
10
GS
DS
Ta = −55°C
(A)
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
25
V GS = 2.9 V
0.8
4
(V)
(V)
3.4
3.3
3.2
3.1
3.0
100
1
5
4
100
0.5
0.4
0.3
0.2
0.1
0.1
40
30
50
20
10
10
0
0
1
0.1
0
0
10
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
4.5
8
6
1
5
R
0.8
V
DS (ON)
V GS = 4.5 V
4
4
I
DS
D
– V
– V
10
DS
GS
– I
1.2
6
D
D
10
I D = 24 A
GS
DS
(A)
Common source
Ta = 25 ℃
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
12
6
TPCA8030-H
1.6
(V)
V GS = 3 V
8
(V)
3.8
2008-06-20
3.6
3.4
3.3
3.2
3.1
100
10
2

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