suu50n03-09p Vishay, suu50n03-09p Datasheet

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suu50n03-09p

Manufacturer Part Number
suu50n03-09p
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUU50N03-09P
Manufacturer:
VISHAY
Quantity:
12 500
Notes
a.
b.
Document Number: 72420
S-41696—Rev. B, 20-Sep-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t ≤ 10 sec.
Based on maximum allowable Junction Temperature, package limitation current is 50 A.
DS
30
30
(V)
Order Number: SUU50N03-09P
a
a
0.0095 @ V
0.014 @ V
a
a
SUU50N03-09P—E3 (Lead (Pb)-Free)
r
DS(on)
G
Top View
TO-251
Parameter
Parameter
D
GS
GS
(Ω)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
S
a
and DRAIN-TAB
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
63
52
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
b
b
T
T
t ≤ 10 sec
T
C
C
C
A
b
= 100_C
= 25_C
= 25_C
= 25_C
G
Symbol
Symbol
N-Channel MOSFET
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
stg
D
S
Typical
1.8
16
40
--55 to 175
Limit
SUU50N03-09P
44.5
20
65.2
7.5
63
30
50
10
35
61
Vishay Siliconix
b
a
b
Maximum
2.3
20
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/
_C
W
W
V
V
A
1

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suu50n03-09p Summary of contents

Page 1

... 0.014 @ TO-251 Top View Order Number: SUU50N03-09P SUU50N03-09P—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... SUU50N03-09P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T -- Junction Temperature (_C) J Document Number: 72420 S-41696—Rev. B, 20-Sep-04 0.05 0. --55_C C 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUU50N03-09P Vishay Siliconix On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...

Page 4

... SUU50N03-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T -- Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. www.vishay.com 4 1000 100 10 1 0.1 0.01 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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