ipb017n06n3 Infineon Technologies Corporation, ipb017n06n3 Datasheet
ipb017n06n3
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ipb017n06n3 Summary of contents
Page 1
... =25 °C D,pulse =100 =25 °C tot stg =0.6 K/W the chip is able to carry 284 A. thJC page 1 IPB017N06N3 1.7 m 180 A Value Unit 180 A 180 720 634 mJ ±20 V 250 W -55 ... 175 °C 55/175/56 2008-12-11 ...
Page 2
... GSS = =100 A DS(on |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB017N06N3 G Values Unit min. typ. max 0.6 K 0.1 3 µ 300 - 1 100 ...
Page 3
... oss =25 ° S,pulse =100 =25 ° = =100A /dt =100 A/µ page 3 IPB017N06N3 G Values Unit min. typ. max. - 17000 23000 pF - 3700 4900 - 120 - - ...
Page 4
... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPB017N06N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...
Page 5
... DS 8 Typ. forward transconductance g =f 320 280 240 200 160 120 175 °C 25 ° [V] GS page 5 IPB017N06N3 =25 ° 4 160 240 320 I [A] D =25 ° 160 I [ 400 ...
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... Forward characteristics of reverse diode I =f parameter Ciss [V] DS page 6 IPB017N06N3 1960 µA 196 µA - 100 140 T [° 175 °C 25 °C 175 °C, max 25 °C, max 0.5 1 1.5 V [V] SD ...
Page 7
... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB017N06N3 =100 A pulsed gate 120 160 200 Q [nC] gate 240 ...
Page 8
... PG-TO263-7 (D²-Pak 7pin) Rev. 2.0 page 8 IPB017N06N3 G 2008-12-11 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 IPB017N06N3 G 2008-12-11 ...