ipb030n08n3 Infineon Technologies Corporation, ipb030n08n3 Datasheet
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ipb030n08n3
Manufacturer Part Number
ipb030n08n3
Description
Optimos Tm 3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.IPB030N08N3.pdf
(9 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ipb030n08n3 G
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
ipb030n08n3 G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
ipb030n08n3G
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.1
1)
2)
3)
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for motor drive applications
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
(TM)
3 Power-Transistor
IPB030N08N3 G
PG-TO263-7
030N08N
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
T
D
page 1
C
C
C
C
=100 A, R
=25 °C
=100 °C
=25 °C
=25 °C
2)
GS
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 175
55/175/56
Value
160
137
640
510
±20
214
IPB030N08N3 G
160
3.0
80
Unit
A
mJ
V
W
°C
V
mΩ
A
2008-06-19