tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 2

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10s)
Thermal resistance, channel to ambient
(t = 10s)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
Note 3:
Note 4:
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: • on lower left of the marking indicates Pin 1.
a) Device mounted on a glass-epoxy board (a)
a) The power dissipation and thermal resistance values are shown for a single device
b) The power dissipation and thermal resistance values are shown for a single device
a) V
b) V
TPC8404
(During single-device operation, power is only applied to one device.).
(During dual operation, power is evenly applied to both devices.).
DD
DD
※ Weekly code:
= −50 V, T
= 50 V, T
※
(a)
ch
ch
Type
Lot No.
Characteristics
= 25°C (Initial), L = 1.0 mH, R
= 25°C (Initial), L = 1.0 mH, R
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(Three digits)
Single-device operation
dual operation
Single-device operation
dual operation
(Note 3a)
(Note 3b)
(Note 2a)
(Note 2b)
G
G
= 25 Ω, I
b) Device mounted on a glass-epoxy board (b)
= 25 Ω, I
2
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
AR
Symbol
AR
= 1.1 A
= −0.9 A
(b)
Max
83.3
114
167
278
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
°C/W
Unit
2006-12-27
TPC8404