tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 2

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10s)
Thermal resistance, channel to ambient
(t = 10s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
Note 3:
Note 4:
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on the lower left of the marking indicates Pin 1.
a) Device mounted on a glass-epoxy board (a)
a) The power dissipation and thermal resistance values are shown for a single device
b) The power dissipation and thermal resistance values are shown for a single device
a) V
b) V
(During single-device operation, power is applied to one device only.).
(During dual operation, power is evenly applied to both devices.).
DD
DD
* Weekly code: (Three digits)
T P C 8 4 0 6
H
= −24 V, T
= 24 V, T
(a)
ch
ch
= 25°C (Initial), L = 0.5 mH, R
Characteristic
= 25°C (Initial), L = 0.5 mH, R
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(Note 2a) Single-device value at
(Note 2b) Single-device value at
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
Single-device operation
dual operation
Single-device operation
dual operation
(Note 3a)
(Note 3b)
(Note 2a)
(Note 2b)
G
G
= 25 Ω, I
b) Device mounted on a glass-epoxy board (b)
= 25 Ω, I
2
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
AR
Symbol
AR
= 6.5 A
= −6.5 A
(b)
Max
83.3
114
167
278
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
°C/W
Unit
TPC8406-H
2006-11-13