tpc8218-h TOSHIBA Semiconductor CORPORATION, tpc8218-h Datasheet - Page 6

• Manufacturer Part Number: tpc8218-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
100
0.1
10
1
0.1
I D max (Pulse) *
* Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
Drain-source voltage V
1000
100
0.1
10
0.001
Safe operating area
1
1
Single - pulse
Single-device value at dual opration
10 ms *
0.01
10
t =1ms *
DS
V DSS max
(V)
(note 3b)
0.1
100
Pulse width t
r
r
th
th
Device mounted on a glass-epoxy board (a) (note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10s
– t
– t
1
(1)Single-device opration (Note 3a)
(2)Single-device value at dual opration (Note 3b)
(3)Single-device opration (Note 3a)
(4)Single-device value at dual opration (Note 3b)
6
w
w
w
(s)
10
100
1000
(4)
(3)
(2)
(1)
TPC8218-H
2009-06-23