tpc8204 TOSHIBA Semiconductor CORPORATION, tpc8204 Datasheet - Page 3

• Manufacturer Part Number: tpc8204
• Description: Toshiba Field Effect Transistor Silicon Channel Type Umosii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristic
Rise time
Turn−on time
Fall time
Turn−off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
I
I
I
C
|Y
C
C
Q
GSS
Q
DRP
DSS
V
Q
t
t
DSF
oss
t
on
off
rss
t
iss
gd
th
fs
r
gs
f
g
|
V
V
I
I
V
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
= 6 A, V
= ±10 V, V
= 20 V, V
= 10 V, I
= 2 V, I
= 2.5 V, I
= 4 V, I
= 10 V, I
= 10 V, V
≈ 16 V, V
D
D
GS
3
D
D
GS
GS
(Ta = 25°C)
D
GS
= 3 A
= 3 A
GS
GS
Test Condition
Test Condition
= 200 µA
= 3 A
DS
= 0 V
= 3A
= 0 V
= −12 V
= 0 V
= 0 V, f = 1 MHz
= 5 V, I
= 0 V
—
D
= 6 A
Min
Min
0.5
8.5
—
—
20
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2740
Typ.
Typ.
520
600
102
22
19
16
17
12
21
31
24
—
—
—
—
—
—
—
3
7
2003-02-18
TPC8204
−1.2
Max
Max
±10
1.2
10
45
30
20
24
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V