tpc8060-h TOSHIBA Semiconductor CORPORATION, tpc8060-h Datasheet

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tpc8060-h

Manufacturer Part Number
tpc8060-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to a small and thin package
High-speed switching
Small gate charge: Q
Low drain-source ON-resistance:
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
(Note 2a) (Note 4)
GS
DC
Pulsed (Note 1)
R
SW
DSS
= 20 kΩ)
DS (ON)
th
= 16 nC (typ.)
= 1.3 to 2.3 V (V
(Note 2a)
(Note 2b)
(t = 10 s)
(t = 10 s)
(Note 1)
= 10 μA (max) (V
(Note 3)
= 3.1 mΩ (typ.) (V
fs
(Ta = 25°C)
| = 63 S (typ.)
TPC8060-H
Symbol
V
V
V
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
D
D
DS
= 10 V, I
= 30 V)
GS
−55 to 150
= 4.5 V)
D
Rating
±20
110
150
1.9
1.0
2.0
30
30
18
72
18
= 1.0 mA)
1
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.085 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
TPC8060-H
2-6J1B
6
3
2009-07-07
5
4
Unit: mm

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tpc8060-h Summary of contents

Page 1

... DGR ± GSS 1 1 110 2 150 °C ch −55 to 150 T °C stg 1 TPC8060-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2009-07-07 ...

Page 2

... The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8060-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2009-07-07 ...

Page 3

... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8060-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ 3.1 4.2 ⎯ 2.6 3.7 ⎯ ...

Page 4

... Drain-source voltage V 0.2 0.15 0.1 0. (V) Gate-source voltage V 10 Common source ℃ Pulse test 1 100 0.1 4 TPC8060-H I – Common source 3.4 3 25°C Pulse test 3.2 3 2.8 V 0.8 2 0.4 1.2 1.6 ( – Common source Ta = 25℃ Pulse test ...

Page 5

... C oss C rss 1 Common source 0 Pulse test 0 100 −80 −40 Ambient temperature 160 0 C) ° 5 TPC8060-H I – 4 −0.4 −0.6 −0.8 −1.0 ( – 120 160 C) ° Dynamic input/output ...

Page 6

... Safe operating area 100 I D max (Pulse 1ms * 10ms * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage V ( – 0.01 0 Pulse width t (s) w 100 6 TPC8060-H (2) (1) Single - pulse 100 1000 2009-07-07 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8060-H 2009-07-07 ...

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