tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet - Page 6
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tpc8030
Manufacturer Part Number
tpc8030
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPC8030.pdf
(7 pages)
100
0.1
10
1
0.1
I D max (Pulse) *
* Single pulse
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
Drain − source voltage V
t = 10 ms *
1000
100
Safe operating area
0.1
10
0.001
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
1 ms *
0.01
V DSS max
10
DS
(V)
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(s)
10
100
Single pulse
(2)
(1)
1000
2008-04-02
TPC8030