sqm120n06-06 Vishay, sqm120n06-06 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
sqm120n06-06
Manufacturer Part Number
sqm120n06-06
Description
Automotive N-channel 60 V D-s 175 °c Mosfet
Manufacturer
Vishay
Datasheet
1.SQM120N06-06.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
sqm120n06-06_GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
S11-2036-Rev. B, 17-Oct-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.001
0.01
- 0.2
- 0.6
- 1.0
- 1.4
- 1.8
100
0.1
0.6
0.2
10
10
8
6
4
2
0
1
0.0
- 50 - 25
0
Source Drain Diode Forward Voltage
www.vishay.com
I
V
D
0.2
DS
= 110 A
20
T
= 20 V
J
V
0
SD
= 150 °C
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Q
- Source-to-Drain Voltage (V)
g
0.4
Threshold Voltage
T
- Total Gate Charge (nC)
25
J
Gate Charge
- Temperature (°C)
40
50
0.6
I
D
75
= 250 μA
60
T
J
= 25 °C
0.8
100
A
= 25 °C, unless otherwise noted)
I
D
125
= 5 mA
80
1.0
150
100
1.2
175
4
0.05
0.04
0.03
0.02
0.01
0.00
2.1
1.8
1.5
1.2
0.9
0.6
Drain Source Breakdown vs. Junction Temperature
80
77
74
71
68
65
www.vishay.com/doc?91000
- 50 - 25
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
I
V
On-Resistance vs. Junction Temperature
D
GS
= 10 A
= 10 V
I
D
= 10 mA
2
V
0
0
T
GS
T
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
4
SQM120N06-06
50
50
T
J
= 25 °C
75
75
Vishay Siliconix
Document Number: 67065
6
100
100
T
J
= 150 °C
125
125
8
150
150
175
175
10