tpcp8701 TOSHIBA Semiconductor CORPORATION, tpcp8701 Datasheet - Page 2

• Manufacturer Part Number: tpcp8701
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Figure 1. Circuit configuration (top view)
Electrical Characteristics
Figure 3. Switching Time Test Circuit & Timing Chart
Note 4: ● on lower left on the marking indicates Pin 1.
Collector cut-off current
Emitter cut-off current
Collector-emitter brakedown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
※ Weekly code: (Three digits)
IB1
Characteristics
Duty cycle ＜1%
Q1
8 7 6 5
1 2
20µs
Rise time
Storage time
Fall time
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
3 4
Year of manufacture
(One low-order digits of calendar year)
IB2
Q2
(Ta = 25°C)
Input
V
V
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
IB1
I
IB2
I
FE
FE
C
CBO
EBO
t
stg
t
t
ob
r
f
(1)
(2)
VCC
V
V
I
V
V
I
I
V
See Figure 3 circuit diagram
V
I
C
C
C
B1
CB
EB
CE
CE
CB
CC
= 10 mA, I
= 1 A, I
= 1 A, I
RL
2
= −I
Output
= 100 V, I
= 7 V, I
= 2 V, I
= 2 V, I
= 10 V, I
∼ − 30 V, R
B2
B
B
Test Condition
= 33.3 mA
= 20 mA
= 20 mA
C
C
C
B
E
= 0
= 0.3 A
= 1 A
L
E
= 0
= 0, f = 1MHz
= 30 Ω
Figure 2. Marking (Note 4)
= 0
8 7 6 5
1 2 3
8701
Min
400
200
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(Weekly code)
Lot No.
※
Typ.
500
120
⎯
⎯
⎯
⎯
⎯
⎯
⎯
13
40
4
TPCP8701
2006-11-13
1000
Max
0.14
1.10
100
100
⎯
⎯
⎯
⎯
⎯
⎯
Type
Unit
nA
nA
pF
ns
V
V
V